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| GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm * * * * Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 20 25 50 200 150 -55 to 150 Unit V V A W C C JEDEC JEITA TOSHIBA 2-21F2C Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Part No. (or abbreviation code) TOSHIBA GT25Q102 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT25Q102 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 25 A VGG = 15 V, RG = 43 (Note1) Min 4.0 Typ. 2.1 1360 0.10 0.30 0.16 0.68 Max 500 1.0 7.0 2.7 Unit nA mA V V pF 0.32 s 0.625 C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT25Q301 -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2006-11-01 GT25Q102 IC - VCE 50 20 Common emitter Tc = 25C 40 Common emitter VCE - VGE VCE (V) Tc = -40C 16 (A) Collector current IC Collector-emitter voltage 20 30 15 12 20 10 10 8 IC = 10 A 4 25 50 VGE = 9 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 Common emitter Tc = 25C 16 VCE - VGE VCE (V) VCE (V) Tc = 125C 16 Collector-emitter voltage Collector-emitter voltage 12 12 8 50 4 IC = 10 A 25 8 50 4 IC = 10 A 25 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 50 Common emitter 4 Common emitter VGE = 15 V 3 VCE (sat) - Tc (A) 40 Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V 50 Collector current IC 25 30 2 IC = 10 A 20 25 1 10 Tc = 125C -40 0 0 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2006-11-01 GT25Q102 Switching time 3 Common emitter VCC = 600 V VGG = 15 V IC = 25 A : Tc = 25C : Tc = 125C ton, tr - RG 1 0.5 Switching time ton, tr - IC ton (s) 1 (s) Switching time ton, tr ton 0.3 Switching time ton, tr 0.5 0.3 0.1 0.05 0.03 tr Common emitter VCC = 600 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C 0 5 10 15 20 25 30 0.1 tr 0.05 3 5 10 30 50 100 300 500 0.01 Gate resistance RG () Collector current IC (A) Switching time 3 Common emitter VCC = 600 V VGG = 15 V IC = 25 A : Tc = 25C : Tc = 125C toff, tf - RG 1 Switching time toff, tf - IC toff toff 0.5 Switching time toff, tf (s) Switching time toff, tf (s) 1 0.3 tf 0.1 0.05 0.03 Common emitter VCC = 600 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C 0 5 10 15 20 25 30 0.5 0.3 tf 0.1 0.05 3 5 10 30 50 100 300 500 0.01 Gate resistance RG () Collector current IC (A) Switching loss 30 Common emitter VCC = 600 V VGG = 15 V IC = 25 A : Tc = 25C : Tc = 125C Note2 Eon, Eoff - RG 10 5 3 Switching loss Eon, Eoff - IC Eon, Eoff (mJ) Eon, Eoff (mJ) 10 Eon Eon 5 3 Eoff 1 0.5 0.3 Eoff Switching loss Switching loss 1 0.5 3 5 10 30 50 100 300 500 0.1 Common emitter VCC = 600 V VGG = 15 V RG = 43 : Tc = 25C : Tc = 125C Note2 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) 4 2006-11-01 GT25Q102 C - VCE 1000 10000 Common emitter RL = 12 Tc = 25C VCE, VGE - QG 20 VCE (V) 800 16 400 12 (pF) 3000 1000 Cies 600 600 Collector-emitter voltage Capacitance C 300 100 Common emitter VGE = 0 f = 1 MHz Tc = 25C 0.3 1 3 10 30 100 Coes Cres 400 VCE = 200 V 8 30 10 0.1 200 4 300 1000 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) Safe operating area 100 50 IC max (pulsed)* 50 s* 100 s* IC max 30 (continuous) 100 50 30 Reverse bias SOA (A) Collector current IC 5 3 DC operation 1 ms* 10 ms* Collector current IC 10 (A) 10 5 3 1 0.5 *: Single nonrepetitive pulse Tc = 25C 1 0.5 0.3 Tj < 125C = VGE = 15 V RG = 43 3 10 30 100 300 1000 3000 Curves must be derated 0.3 linearly with increase in temperature. 0.1 1 3 10 30 100 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 10 2 Rth (t) - tw Tc = 25C Transient thermal impedance Rth (t) (C/W) 10 1 10 0 10 -1 -2 -3 10 10 10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Pulse width tw (s) 5 2006-11-01 Gate-emitter voltage VGE (V) GT25Q102 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01 |
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